Quantum dot light emitting diode and manufacturing method

Abstract

Provided are a quantum dot light emitting diode and a manufacturing method. The quantum dot light emitting diode comprises: a pair of electrodes, arranged side by side and spaced; a flip chip light emitting diode, disposed on the electrodes and electrically connected to the electrodes; a quantum dot interlayer, disposed on the flip chip light emitting diode; a package layer, covering the electrodes, the flip chip light emitting diode and the quantum dot interlayer; and a whitening adhesive layer, surrounding the package layer. The quantum dot interlayer is disposed to isolate the invasion of the external water and oxygen to the quantum dot layer and the light emitting diode chip to form an environment, in which the quantum dots are isolated from water and oxygen.

Dependencies are inferred from the claim text.