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US 2019/0245102 A1Published application
Imaging element, solid state imaging device, and electronic device
AssigneeSony Corporation
InventorToshiki MORIWAKI
Life of this patent
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Abstract
An imaging element includes a first electrode, a second electrode, and a light receiving layer between the first electrode and the second electrode to receive incident light from the second electrode. The second electrode includes an indium-tin oxide layer which includes at least one of silicon or silicon oxide.
Claims20
An imaging element, comprising:
- a first electrode;
- a second electrode;
- and
- a light receiving layer between the first electrode and the second electrode to receive incident light from the second electrode,
- wherein the second electrode includes an indium-tin oxide layer which includes at least one of silicon or silicon oxide.
2 more elements
An imaging element, comprising:
- a first electrode;
- a second electrode;
- and
- a light receiving layer between the first electrode and the second electrode to receive incident light from the second electrode,
- wherein the second electrode includes an indium-tin oxide layer which includes at least one of cobalt, cobalt oxide, tungsten, tungsten oxide, zinc, or zinc oxide.
2 more elements
An electronic device, comprising:
- a first electrode;
- a second electrode;
- and
- a light emitting or receiving layer between the first electrode and the second electrode to transmit light received from the second electrode,
- wherein the second electrode includes an indium-tin oxide layer which includes i) at least one of silicon or silicon oxide;
- or ii) at least one of cobalt, cobalt oxide, tungsten, tungsten oxide, zinc, or zinc oxide.
3 more elements
Dependencies are inferred from the claim text.