Solar cell contact formation using laser ablation

A solar cell comprising:

• a dielectric material above a silicon substrate;
• a material layer above the dielectric material, the material layer having first and second doped regions and a plurality of recast poly signatures;
• a first dielectric layer above material layer;
• and
• a plurality of conductive contacts through the first dielectric layer with each of the plurality of conductive contacts being in alignment with one of the plurality of recast poly signatures in the material layer.

A solar cell comprising:

• a material layer above a silicon substrate, the material layer including a first doped region and a first recast poly signature in the first doped region;
• a dielectric film between the silicon substrate and the poly-crystalline silicon layer;
• a first dielectric layer above the material layer;
• a conductive contact through the first dielectric layer and in contact with the first doped region, the conductive contact being in alignment with the first recast poly signature in the first doped region, wherein the solar cell further comprises a second dielectric layer disposed between material layer and the first dielectric layer.

A solar cell comprising:

• a material layer above a silicon substrate;
• and
• a dielectric stack comprising a first dielectric layer and a second dielectric layer, the second dielectric layer being between the material layer and the first dielectric layer;
• a conductive contact through the dielectric stack, the conductive contact directly contacting a recast poly signature in a first doped region in the material layer,
• wherein the first dielectric layer of the dielectric stack comprises silicon nitride, and the second dielectric layer of the dielectric stack comprises silicon dioxide that is directly disposed on the material layer.