Transistor and its manufacturing process

A transistor carried by at least one substrate comprising at least one active layer based on at least one semiconductor material, the transistor comprising :

• a) at least one source area and at least one drain area;
• b) at least one electrical contact area;
• c) at least one conduction channel:
• i) located between the source area and the drain area;
• ii) extending from said source area to said drain area in a transverse dimension j1 and extending in a longitudinal dimension Jc;
• d) at least one gate completely overlying said conduction channel, wherein said gate comprises:
• (1) a longitudinal portion extending longitudinally from at least each of the source and drain areas, above the conduction channel, and at least to the electrical contact area;
• (2) a transverse portion located between the electrical contact area and each of the source and drain areas and extending transversely on either side of a portion of the active layer on a transverse dimension I4, and the transverse portion comprising :
• (a) at least a first portion extending transversely beyond a first side of said portion of the active layer on a first extension dimension I2, the first portion being shaped to be disposed between a portion of the electrical contact area and a first area taken from the source area or the drain area so as to avoid any electrical connection between the electrical contact area and said first area;
• (b) at least a second portion extending transversely beyond a second side of said portion of the active layer, opposite said first side, on a second extension dimension I3;
• and in that:
• I2>I3 with I3≠0,
• and in that the electrical contact area is located at a distance from the source area and the drain area so as to avoid any electrical connection between the electrical contact area and a second area being the other area taken from the source area or the drain area, the second area being which is disposed opposite the electrical contact area.