Methods and apparatus related to termination regions of a semiconductor device

A method comprising:

• forming a trench defined in a semiconductor region, the trench having a depth aligned along a vertical axis and having a length aligned along a longitudinal axis orthogonal to the vertical axis, the trench having a first portion of the length included in a termination region of the semiconductor region and having a second portion of the length included in an active region of the semiconductor region;
• forming a shield electrode in the trench;
• and
• forming a dielectric, the dielectric lining a bottom portion of the trench, the dielectric having a first portion disposed in the termination region of the semiconductor region and a second portion disposed in the active region of the semiconductor region, the first portion of the dielectric disposed in the termination region having a vertical thickness greater than a vertical thickness of the second portion of the dielectric disposed in the active region, the vertical thickness of the first portion of the dielectric extending between a bottom surface of the trench and a bottom surface of the shield electrode in the termination region, the vertical thickness of the second portion of the dielectric extending between the bottom surface of the trench and the bottom surface of the shield electrode in the active region.

A method, comprising:

• forming a first trench in a semiconductor region, the trench having a first portion included in a termination region of the semiconductor region and having a second portion included in an active region of the semiconductor region;
• forming a dielectric, the dielectric lining a bottom portion of the trench, the dielectric having a first portion disposed in the termination region of the semiconductor region and a second portion disposed in the active region of the semiconductor region, the first portion of the dielectric disposed in the termination region having a thickness different than a thickness of the second portion of the dielectric disposed in the active region;
• and
• forming a second trench aligned parallel to the first trench and having a profile intersecting a profile of the first trench, the first trench having a depth different than a depth of the second trench, the first trench and the second trench defining a single trench.