US 2019/0245074 A1 · SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME

Abstract

A semiconductor structure includes: a channel layer; an active layer over the channel layer, wherein the active layer is configured to form a two-dimensional electron gas (2DEG) to be formed in the channel layer along an interface between the channel layer and the active layer; a gate electrode over a top surface of the active layer; and a source/drain electrode over the top surface of the active layer; wherein the active layer includes a first layer and a second layer sequentially disposed therein from the top surface to a bottom surface of the active layer, and the first layer possesses a higher aluminum (Al) atom concentration compared to the second layer. An HEMT structure and an associated method are also disclosed.

Claims20

Dependent claims

A method for forming a semiconductor structure, comprising:

providing a channel layer having an active layer formed thereon;
performing an anneal upon the top surface of the active layer with a first temperature;
depositing an aluminum nitride (AlN) film over the top surface of the active layer;
and
performing an anneal upon the AlN film with a second temperature, and the second temperature is higher than the first temperature.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/390,543Filed 22 Apr 2019

Priority

3 Jun 2016

Published

8 Aug 2019

Term ends

Not estimatedThe source records don’t support an estimate.

Classification17 codes

H10D 30/475
High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]: having wider bandgap layer formed on top of lower bandgap…
H10D 30/014
Manufacture or treatment: of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron…
H10D 30/015
Manufacture or treatment: of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
H10D 30/021
Manufacture or treatment: of FETs having insulated gates [IGFET]

Family

Application15/172,775Division · filed 3 Jun 2016

Application15/796,377Continuation · filed 27 Oct 2017

Application16/390,543Continuation

Application15/796,377Division

US 10,269,949 B2Related patent

US 10,964,804 B2Related patent

US 2018/0053839 A1Published application

US 9,812,562 B1Related patent

US 2019/0245074 A1This patent

From the US filing history. Foreign family members aren’t listed.

Semiconductor structure, hemt structure and method of forming the same

Life of this patent

Semiconductor structure, hemt structure and method of forming the same

Life of this patent

Abstract

Claims20