Method for making thin film transistor

A method for making a thin film transistor, the method comprising:

• providing a semiconductor layer on a substrate;
• arranging a first photoresist layer, a nanowire structure, a second photoresist layer on a surface of the semiconductor layer so that the nanowire structure is sandwiched between the first photoresist layer and the second photoresist layer, wherein the nanowire structure comprises a single nanowire;
• forming one opening communicating between the first photoresist layer and the second photoresist layer thereby a portion of the surface of the semiconductor layer is exposed to form an exposed surface, wherein a part of the nanowire is exposed and suspended in the opening, and both ends of the nanowire are sandwiched between the first photoresist layer and the second photoresist layer;
• depositing a conductive film layer on the exposed surface of the semiconductor layer and forming a nano-scaled channel corresponding to the nanowire, wherein the conductive film layer is divided into two regions by the nano-scaled channel, a source electrode is defined in one of the two regions, and a drain electrode is defined in another one of the two regions;
• removing the first photoresist layer, the nanowire structure, and the second photoresist layer;
• and
• forming an insulating layer covering the source electrode and the drain electrode, and arranging a gate electrode on the insulating layer.