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US 2019/0245065 A1Published application
Semiconductor device and method for fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsI-Sheng CHEN, Cheng-Hsien WU, Chih-Chieh YEH
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Abstract
A device includes a substrate, a first doping portion, a second doping portion, a channel, a semiconductor film, a high-k layer, and a gate. The first doping portion and the second doping portion are over the substrate. The channel is over the substrate and between the first doping portion and the second doping portion. The semiconductor film is around the channel. The high-k layer is around the semiconductor film. The gate is over the high-k layer.
Claims20
A device, comprising:
- a substrate;
- a first doping portion and a second doping portion over the substrate;
- a channel over the substrate and between the first doping portion and the second doping portion;
- a semiconductor film around the channel;
- a high-k layer around the semiconductor film;
- and
- a gate over the high-k layer.
4 more elements
A device, comprising:
- a substrate;
- a first doping portion and a second doping portion over the substrate;
- a channel over the substrate and between the first doping portion and the second doping portion;
- a first semiconductor portion surrounded by the first doping portion;
- a high-k layer around the channel;
- a gate over the high-k layer;
- and
- a semiconductor film over a sidewall of the first semiconductor portion.
5 more elements
A device, comprising:
- a substrate;
- a first doping portion and a second doping portion over the substrate;
- a channel over the substrate and between the first doping portion and the second doping portion;
- an interface layer around the channel;
- a high-k layer around the interface layer;
- a gate over the high-k layer;
- and
- a semiconductor film between the interface layer and the channel.
5 more elements
Dependencies are inferred from the claim text.