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US 2019/0245058 A1Published application
Heterojunction bipolar transistor power amplifier with backside thermal heatsink
AssigneeQUALCOMM Incorporated
InventorsBin YANG, Gengming TAO, Xia LI
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Abstract
A heterojunction bipolar transistor may include an emitter, a base contacting the emitter, a collector contacting the base, a sub-collector contacting the collector, and an electrical isolation layer contacting the sub-collector. The heterojunction bipolar transistor may also include a backside heatsink thermally coupled to the sub-collector and the collector. The backside heatsink may be aligned with a central axis of the emitter and the base.
Claims14
A heterojunction bipolar transistor, comprising:
- an emitter;
- a base contacting the emitter;
- a collector contacting the base;
- a sub-collector contacting the collector;
- a backside heatsink thermally coupled to the sub-collector and the collector, in which the backside heatsink is substantially aligned with the emitter and the base;
- and
- a backside ground via in electrical contact with the emitter.
4 more elements
A heterojunction bipolar transistor-based power amplifier, comprising:
- an emitter;
- a base contacting the emitter;
- a collector contacting the base;
- a sub-collector contacting the collector;
- means for dissipating heat from the collector through the sub-collector;
- and
- a backside ground via in electrical contact with the emitter.
4 more elements
Dependencies are inferred from the claim text.