Hybrid Doping Profile

A finFET device, comprising:

• a fin structure disposed on a substrate;
• a gate disposed on a first fin portion of the fin structure;
• and
• first and second epitaxial regions disposed on second and third fin portions of the fin structure, respectively,
• wherein the first fin portion comprises a doping profile across a plane extending from a surface of the first fin portion,
• wherein the doping profile comprises first and second peak dopant concentrations, and
• wherein the first peak dopant concentration is greater in magnitude and closer to the surface of the first fin portion than the second peak dopant concentration.

A method of fabricating a finFET device, the method comprising:

• forming a fin structure on a substrate;
• forming a gate over a first fin portion of the fin structure;
• forming source/drain regions on second and third fin portions of the fin structure;
• and
• doping first and second regions in the first fin portion to form a doping profile across a plane in the first fin portion,
• wherein the doping profile has first and second peak dopant concentrations corresponding to the first and second regions, respectively, and
• wherein the first peak dopant concentration is greater in magnitude than the second peak dopant concentration.