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US 2019/0245049 A1Published application
Self-limiting fin spike removal
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Choonghyun Lee, Juntao Li, Peng Xu
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Abstract
Provided is a method for forming a semiconductor structure. In embodiments of the invention, the method includes laterally forming a spacer on a side of the semiconductor structure. The method further includes performing a thermal anneal on the semiconductor structure. The method further includes performing an etch to remove materials formed by the thermal anneal.
Claims20
A method for forming a semiconductor structure, the method comprising:
- forming a silicon fin on a silicon germanium strain relaxed buffer (SRB) layer;
- laterally forming a spacer on a side of the silicon fin;
- performing a thermal anneal;
- and
- performing an etch to remove material formed by the thermal anneal;
- wherein the spacer comprises germanium oxide at least partially formed on at least part of the silicon fin.
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A semiconductor structure, comprising:
- a substrate;
- one or more fin regions contacting the substrate and extending in a first direction, the fin region at least partially comprising silicon germanium and silicon oxide converted from silicon germanium;
- and
- a shallow trench isolation region contacting the substrate and between the one or more fin regions.
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A semiconductor structure, comprising:
- a substrate;
- one or more fin regions each overlaying a silicon germanium strain relaxed buffer region contacting the substrate and extending in a first direction, the fin region at least partially comprising silicon germanium and silicon oxide converted from silicon germanium;
- and
- a shallow trench isolation region contacting the substrate and between the one or more fin regions;
- wherein the fin region is formed by:
- laterally forming a germanium oxide spacer on a side of the silicon fin region, in the first direction;
- performing a thermal anneal on the semiconductor structure;
- and
- performing an etch to remove silicon oxide and a silicon germanium area with a high percentage of germanium formed by the thermal anneal.
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Dependencies are inferred from the claim text.