High Electron Mobility Transistor Structure and Method of Making the Same

A device comprising:

• a first layer;
• a second layer disposed over the first layer;
• a gate structure disposed directly on the second layer;
• a source/drain feature disposed over the second layer;
• and
• a non-conductive patch extending between the source/drain feature and the gate structure, wherein the non-conductive patch includes a first portion having a first width and a second portion having a second width that is different than the first portion.

A device comprising:

• a first semiconductor layer;
• a second semiconductor layer disposed over the first semiconductor layer, the second semiconductor layer formed of a different material than the first semiconductor layer;
• a gate structure disposed over the second semiconductor layer;
• a source/drain feature disposed on the second semiconductor layer;
• and
• a plurality of non-conductive patches disposed between the gate structure and the source/drain feature and extend to the first semiconductor layer.