Group iii nitride semiconductor device and method of manufacturing group iii nitride semiconductor substrate
AssigneeKabushiki Kaisha Toyota Chuo Kenkyusho
InventorsKeita KATAOKA, Tetsuo NARITA
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Abstract
A method of manufacturing a group III nitride semiconductor substrate may comprise introducing group III element vacancies to a first region of the group III nitride semiconductor substrate. The method may comprise introducing an acceptor element to a second region of the group III nitride semiconductor substrate. The second region may contact the first region at least in part. The method may comprise performing annealing to activate the acceptor element in the second region.
Claims9
A method of manufacturing a group III nitride semiconductor substrate, the method comprising:
- introducing group III element vacancies to a first region of the group III nitride semiconductor substrate;
- introducing an acceptor element to a second region of the group III nitride semiconductor substrate, the second region contacting the first region at least in part;
- and
- performing annealing to activate the acceptor element in the second region.
A group III nitride semiconductor device comprising:
- a first region;
- and
- a second region,
- wherein
- at least a part of the first region contacts the second region,
- the second region includes an acceptor element, and
- a defect concentration in the first region is higher than a defect concentration in the second region.
Dependencies are inferred from the claim text.