Semiconductor element and method of manufacturing the same

A method of manufacturing a semiconductor element, the method comprising:

• preparing a semiconductor substrate of a first conduction type having a principal surface and a back surface;
• forming a silicon carbide semiconductor layer of the first conduction type disposed on the principal surface of the semiconductor substrate;
• forming a terminal edge region of a second conduction type disposed in the silicon carbide semiconductor layer;
• forming an insulating film covering at least part of the terminal edge region;
• forming a first electrode disposed on the silicon carbide semiconductor layer to form a Schottky contact with the silicon carbide semiconductor layer;
• forming a second electrode disposed on the back surface of the semiconductor substrate and functioning as an ohmic contact with the semiconductor substrate;
• and
• forming a seal ring disposed on the silicon carbide semiconductor layer to surround the first electrode,
• wherein the terminal edge region is disposed to surround part of a surface of the silicon carbide semiconductor layer when viewed in a normal direction of the principal surface of the semiconductor substrate,
• the terminal edge region includes a guard ring region of the second conduction type contacting the surface of the silicon carbide semiconductor layer, and a terminal edge injection region of the second conduction type disposed to surround the guard ring region separately from the guard ring region,
• the first electrode has a surface contacting the silicon carbide semiconductor layer,
• the first electrode contacts the guard ring region at an edge part of the surface contacting the silicon carbide semiconductor layer,
• the seal ring is formed on the terminal edge injection region through an opening formed on the insulating film, and
• the guard ring region and the terminal edge injection region are formed through an identical process.