Iii-v semiconductor layers, iii-v semiconductor device and methods of manufacturing thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMark VAN DAL, Gerben DOORNBOS, Matthias PASSLACK, Martin Christopher HOLLAND
Life of this patent
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Abstract
A gate-all-around field effect transistor (GAA FET) includes an InAs nano-wire as a channel layer, a gate dielectric layer wrapping the InAs nano-wire, and a gate electrode metal layer formed on the gate dielectric layer. The InAs nano-wire has first to fourth major surfaces three convex-rounded corner surfaces and one concave-rounded corner surface.
Claims20
A gate-all-around field effect transistor (GAA FET), comprising:
- a nano-wire made of a Group III-V semiconductor as a channel layer;
- a gate dielectric layer wrapping the nano-wire;
- and
- a gate electrode metal layer formed on the gate dielectric layer, wherein:
- the nano-wire has first to fourth major faces first to third convex-rounded corner faces and one concave-rounded corner face.
A gate-all-around field effect transistor (GAA FET), comprising:
- a bottom fin structure extending in a first direction;
- an InAs nano-wire as a channel layer;
- and
- a gate electrode extending in a second direction crossing the first direction, and including a gate dielectric layer wrapping the InAs nano-wire and a gate electrode metal layer formed on the gate dielectric layer, wherein:
- the InAs nano-wire has a triangular cross section with rounded corners, and
- in the second direction, a width of the InAs nano-wire under the gate electrode is greater than a width of the bottom fin structure.
A gate-all-around field effect transistor (GAA FET), comprising:
- a bottom fin structure extending in a first direction;
- an InAs nano-wire as a channel layer;
- and
- a gate electrode extending in a second direction crossing the first direction, and including a gate dielectric layer wrapping the InAs nano-wire and a gate electrode metal layer formed on the gate dielectric layer, wherein:
- the InAs nano-wire has a boomerang shape cross section, and
- in the second direction, a width of the InAs nano-wire under the gate electrode is greater than a width of the bottom fin structure.
Dependencies are inferred from the claim text.