Semiconductor device

A semiconductor device, comprising:

• a first semiconductor region of a first conductivity type;
• a second semiconductor region provided on the first semiconductor region, the second semiconductor region being of a second conductivity type;
• a third semiconductor region provided on the second semiconductor region, the third semiconductor region being of the first conductivity type;
• a gate electrode, the gate electrode opposing, in a second direction with a gate insulating layer interposed, the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region, the second direction being perpendicular to a first direction, the first direction being from the second semiconductor region toward the third semiconductor region;
• and
• a conductive portion electrically connected to the second semiconductor region and the third semiconductor region, the conductive portion including a first portion and a second portion, the first portion being arranged in the second direction with a portion of the second semiconductor region, the second portion being arranged in the second direction with at least a portion of the third semiconductor region, a length in the second direction of the first portion being longer than a length in the second direction of the second portion.