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US 2019/0245033 A1Published application
Power semiconductor device
AssigneeUBIQ Semiconductor Corp.
InventorChin-Fu Chen
Life of this patent
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Abstract
A power semiconductor device including a substrate having an active region and a terminal region is provided. The active region has a plurality of first trenches. The terminal region has a second trench. The first trenches are extended along a first direction and arranged along a second direction. The second trench is extended along the second direction. The first direction is intersected with the second direction. The second trench has a plurality of protruding portions respectively located between two adjacent first trenches.
Claims19
A power semiconductor device, comprising:
- a substrate having an active region and a terminal region, wherein the active region has a plurality of first trenches, the terminal region has a second trench, the first trenches are extended along a first direction and arranged along a second direction, the second trench is extended along the second direction, and the first direction and the second direction are intersected,
- wherein the second trench has a parallel portion and a plurality of protruding portions, the parallel portion has a first side and a second side opposite to each other, the first side is adjacent to the active region, the protruding portions are located on the first side of the parallel portion and respectively located between two adjacent first trenches, and the second side of the parallel portion is a straight shape parallelly disposed along the second direction.
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Dependencies are inferred from the claim text.