Display device

A display device comprising:

• a substrate including a display area where plural pixels are formed, wherein, for each of the plural pixels:
• said each of the plural pixels includes a first TFT of a first oxide semiconductor,
• a first gate insulating film is formed on the first oxide semiconductor,
• a first gate electrode is formed on the first gate insulating film,
• an interlayer insulating film is formed over the first gate electrode,
• the first gate insulating film includes a first silicon oxide film,
• the first gate electrode includes a first gate layer made of a second oxide semiconductor and a second gate layer made of metal or alloy,
• an eaves of the second gate layer is formed to the second oxide semiconductor,
• a distance between a drain region and a source region of the first oxide semiconductor is wider than a width of the second oxide semiconductor in cross sectional view, and
• a defect density in the first silicon oxide film is 1×1018 (spins/cm3) or less by ESR (Electron Spin resonance) analysis,
• the interlayer insulating film has a first interlayer insulating film including a second silicon oxide film, and a second interlayer insulating film including a first aluminum oxide film on the first interlayer insulating film,
• a second gate insulating film is formed under the first oxide semiconductor, and
• a second gate electrode is formed under the second gate insulating film.