Ferroelectric device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorHyangkeun YOO
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Abstract
In a method of manufacturing a ferroelectric device, a substrate is provided. A ferroelectric material film is formed over the substrate. A crystallization seed film is formed over the ferroelectric material film. The ferroelectric material film is heat-treated to covert the ferroelectric material film into a crystalline ferroelectric film. The crystallization seed film is removed to expose the crystalline ferroelectric film. An electrode film is formed over the ferroelectric film.
Claims21
A method of manufacturing a ferroelectric device, the method comprising:
- providing a substrate;
- forming a ferroelectric material film over the substrate;
- forming a crystallization seed film over the ferroelectric material film;
- heat-treating the ferroelectric material film to convert the ferroelectric material film into a crystalline ferroelectric film;
- removing the crystallization seed film to expose the crystalline ferroelectric film;
- and
- forming an electrode film over the crystalline ferroelectric film.
A method of manufacturing a ferroelectric device, the method comprising:
- providing a substrate;
- forming a crystallization seed film over the substrate;
- forming a ferroelectric material film over the crystallization seed film;
- heat-treating the ferroelectric material film to covert the ferroelectric material film into a crystalline ferroelectric film;
- and
- forming an electrode film over the crystalline ferroelectric film.
A ferroelectric device comprising:
- a substrate;
- an interfacial insulating layer disposed over the substrate;
- a crystallization seed layer disposed over the interfacial insulating layer;
- a ferroelectric layer disposed over the crystallization seed layer;
- and
- a gate electrode layer disposed over the ferroelectric layer,
- wherein the crystallization seed layer includes a dielectric layer having a dielectric constant that is greater than a dielectric constant of the interfacial insulating layer.
A ferroelectric device comprising:
- a substrate;
- a ferroelectric layer disposed over the substrate;
- and
- a gate electrode layer disposed over the ferroelectric layer,
- wherein the ferroelectric layer has a thickness of 3 nm to 15 nm, and
- wherein an average grain size of the ferroelectric layer is smaller than the thickness of the ferroelectric layer.
Dependencies are inferred from the claim text.