Three-dimensional semiconductor memory devices
AssigneeSamsung Electronics Co., Ltd.
InventorsEuntaek Jung, JoongShik SHIN, SangJun HONG
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Abstract
A three-dimensional (3D) semiconductor memory device includes a source conductive pattern on a substrate and extending in parallel to a top surface of the substrate, and an electrode structure including an erase control gate electrode, a ground selection gate electrode, cell gate electrodes, and a string selection gate electrode, which are sequentially stacked on the source conductive pattern in a first direction perpendicular to the top surface of the substrate.
Claims24
A three-dimensional (3D) semiconductor memory device comprising:
- a source conductive pattern on a substrate and extending in parallel to a top surface of the substrate;
- and
- an electrode structure comprising an erase control gate electrode, a ground selection gate electrode, cell gate electrodes, and a string selection gate electrode, which are sequentially stacked on the source conductive pattern in a first direction perpendicular to the top surface of the substrate.
-6. (canceled)
(canceled)
(canceled)
A three-dimensional (3D) semiconductor memory device comprising:
- a source conductive pattern extending in parallel to a top surface of a substrate;
- and
- a plurality of NAND cell strings provided on the source conductive pattern and extending in a first direction perpendicular to the top surface of the substrate,
- wherein each of the plurality of NAND cell strings comprises:
- a cell string comprising a plurality of memory cell transistors connected in series to each other;
- a ground selection transistor connected to a first end of the cell string;
- and
- an erase control transistor connected between the ground selection, transistor and the source conductive pattern.
A three-dimensional (3D) semiconductor memory device comprising:
- an electrode structure comprising a plurality of electrodes stacked in a first direction perpendicular to a top surface of a substrate, the electrode structure extending in a second direction parallel to the top surface of the substrate;
- a source conductive pattern between the substrate and the electrode structure and extending it parallel to the electrode structure;
- a vertical semiconductor pattern that penetrates the electrode structure and the source conductive pattern, wherein a portion of a sidewall of the vertical semiconductor pattern is in contact with the source conductive pattern;
- and
- a data storage pattern extending between the vertical semiconductor pattern and the electrode structure in the first direction,
- wherein the source conductive pattern comprises:
- a horizontal portion under the electrode structure and extending in the second direction;
- and
- sidewall portion that extends from the horizontal portion in the first direction and is on the portion of the sidewall of the vertical semiconductor pattern.
-40. (canceled)
Dependencies are inferred from the claim text.