Reference voltage generation device
AssigneeAblic Inc.
InventorHideo YOSHINO
Life of this patent
Estimating the term…
Loading patent…
AssigneeAblic Inc.
InventorHideo YOSHINO
Estimating the term…
The reference voltage generation device includes a constant current circuit which includes a first MOS transistor, and a voltage generation circuit which includes a second MOS transistor. The first MOS transistor includes a gate electrode, a source region, a drain region, and a channel impurity region which have a first conductivity type and has a first channel size. The second MOS transistor includes a gate electrode of a second conductivity type, and a source region, a drain region, and a channel impurity region which have the first conductivity type and has a second channel size different from the first channel size. The channel impurity regions have different impurity concentrations.
A reference voltage generation device, comprising:
Dependencies are inferred from the claim text.