Back to results
US 2019/0244948 A1Published application
Electronic system having increased coupling by using horizontal and vertical communication channels
AssigneeSTMicroelectronics S.r.l.
InventorAlberto PAGANI
Life of this patent
Estimating the term…
Abstract
An electronic system supports superior coupling by implementing a communication mechanism that provides at least for horizontal communication for example, on the basis of wired and/or wireless communication channels, in the system. Hence, by enhancing vertical and horizontal communication capabilities in the electronic system, a reduced overall size may be achieved, while nevertheless reducing complexity in printed circuit boards coupled to the electronic system. In this manner, overall manufacturing costs and reliability of complex electronic systems may be enhanced.
Claims14
An apparatus, comprising:
- a first integrated circuit die singulated from a wafer and comprising a first semiconductor substrate and a first metallization structure mounted to the first semiconductor substrate, wherein the first metallization structure includes a first contact pad and wherein the first semiconductor substrate includes a first through silicon via having a first end exposed at a bottom surface of the first semiconductor substrate;
- a second integrated circuit die singulated from a wafer and comprising a second semiconductor substrate and a second metallization structure mounted to the second semiconductor substrate, wherein the second metallization structure includes a second contact pad and wherein the second semiconductor substrate includes a second through silicon via having a second end exposed at a bottom surface of the second semiconductor substrate;
- a first dielectric layer disposed in contact with the first metallization structure and a side surface of the first semiconductor substrate, said first dielectric layer including a first communication pad that is electrically connected to said first contact pad;
- a second dielectric layer disposed in contact with the second metallization structure and a side surface of the second semiconductor substrate, said second dielectric layer including a second communication pad that is electrically connected to said second contact pad;
- wherein the bottom surfaces of the first and second semiconductor substrates face each other, and
- wherein the first end of the first through silicon via is electrically coupled to the second end of the second through silicon via
3 more elements
Dependencies are inferred from the claim text.