Semiconductor Device and Method of Manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Sung-Feng Yeh, Ming-Fa Chen, Hsien-Wei Chen, Tzuan-Horng Liu
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Abstract
A semiconductor device and method of manufacture are presented in which a first semiconductor device and second semiconductor device are bonded to a first wafer and then singulated to form a first package and a second package. The first package and second package are then encapsulated with through interposer vias, and a redistribution structure is formed over the encapsulant. A separate package is bonded to the through interposer vias.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- attaching a first semiconductor device and a second semiconductor device to a first wafer;
- forming first through interposer vias adjacent to the first semiconductor device and the second semiconductor device;
- exposing through substrate vias by removing a portion of the first semiconductor device and the second semiconductor device;
- applying a dielectric material around the first through interposer vias;
- singulating the first wafer to form a first package and a second package;
- attaching the first package and the second package to a carrier wafer, wherein second through interposer vias are located on the carrier wafer;
- encapsulating the first package, the second package, and the second through interposer vias with an encapsulant;
- thinning the encapsulant to expose the through substrate vias;
- and
- forming a redistribution structure over the encapsulant.
A method of manufacturing a semiconductor device, the method comprising:
- attaching a first die and a second die to a first wafer, the first die comprising first through substrate vias;
- thinning the first die and the second die without exposing the first through substrate vias;
- forming first through interposer vias on the first wafer after the thinning the first die and the second die;
- applying a dielectric material around the first die, the second die, and the first through interposer vias;
- singulating the first wafer to form a first package and a second package;
- encapsulating the first package, the second package, and second through interposer vias with an encapsulant;
- thinning the encapsulant to expose the first through substrate vias;
- recessing a portion of the first die and a portion of the second die after the thinning the encapsulant;
- applying a second dielectric material into the recess;
- and
- forming a redistribution structure over the second dielectric material.
A method of manufacturing a semiconductor device, the method comprising:
- thinning a first die and a second die without exposing first through substrate vias within the first die, wherein the first die is hybrid bonded to a first wafer prior to the thinning the first die;
- plating first through interposer vias onto the first wafer after the thinning the first die and the second die;
- forming a first package from the first die and the first wafer;
- forming a second package from the second die and the first wafer;
- plating second through interposer vias onto a carrier wafer;
- encapsulating the first package, the second package, and the second through interposer vias with an encapsulant, wherein the encapsulant is in physical contact with the first through interposer vias;
- planarizing the encapsulant to expose the first through substrate vias;
- exposing sidewalls of the first through substrate vias by removing a portion of the first die after the planarizing the encapsulant;
- and
- replacing the portion of the first die with a dielectric material.
Dependencies are inferred from the claim text.