Semiconductor package having a tsv structure

A semiconductor package, comprising:

• a substrate comprising a first surface and a second surface opposite to the first surface;
• a first semiconductor chip mounted on the first surface of the substrate and connected to a plurality of first through vias;
• a second semiconductor chip mounted on the second surface of the substrate and spaced apart horizontally from the first semiconductor chip;
• a package molding material disposed on the first surface of the substrate and covering sidewalls of the first semiconductor chip and covering sidewalls of the second semiconductor chip;
• and
• an electromagnetic shielding layer extended along sidewalls of the package molding material and an upper surface of the package molding material and connected to some of the plurality of first through vias.

A semiconductor package, comprising:

• a substrate comprising a first surface and a second surface opposite to the first surface;
• a vertically stacked chip structure mounted on the first surface of the substrate, the vertically stacked chip structure comprising a first semiconductor chip and a second semiconductor chip disposed on the first semiconductor chip;
• a third semiconductor chip mounted on the first surface of the substrate and spaced apart horizontally from the vertically stacked chip structure;
• a package molding material disposed on the first surface of the substrate and covering sidewalls of the vertically stacked chip structure and covering sidewalls of the third semiconductor chip;
• and
• an electromagnetic shielding layer extended along sidewalls and an upper surface of the package molding material,
• wherein the second semiconductor chip is disposed at a top of the vertically stacked chip structure,
• wherein the first semiconductor chip is disposed between the second semiconductor chip and the substrate,
• wherein the first semiconductor chip is connected to a plurality of first through vias,
• wherein the second semiconductor chip is connected to a plurality of second through vias,
• wherein a number of second through vias of the plurality of second through vias is different from a number of first through vias of the plurality of first though vias, and
• wherein the electromagnetic shielding layer is connected to the second through vias.