Methods of forming connector pad structures, interconnect structures, and structures thereof

A package comprising:

• an integrated circuit die;
• a molding material encapsulating integrated circuit die;
• a first metallization pad electrically connected to the integrated circuit die by a redistribution structure, an average surface roughness of a lateral surface of the first metallization pad is in the range of 0.18 μm to 0.25 μm;
• a second metallization pad electrically connected to the first metallization pad by a through via, the second metallization pad is on an opposing side of the integrated circuit die as the first metallization pad, the through via extends through the molding material;
• a first connector on the first metallization pad;
• and
• a second connector on the second metallization pad.

A method comprising:

• forming a metallization pad electrically connected to an integrated circuit die;
• exposing an upper surface of the metallization pad to a plasma treatment, the plasma treatment increases a surface roughness of the upper surface of the metallization pad;
• depositing a polymer layer on a first portion of the upper surface of the metallization pad;
• and
• forming a connector on a second portion of the upper surface of the metallization pad.