Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsSung Young YOON, Yong Sang CHO, Sang Su HA
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor chip including a gate structure, the semiconductor chip having a first region and a second region that surrounds sides of the first region, first solder balls on the first region of the semiconductor chip and containing a first weight percent of silver, second solder balls on the first region of the semiconductor chip and containing a second weight percent of silver greater than the first weight percent, and third solder balls on the second region of the semiconductor chip and containing a third weight percent of silver less than the first weight percent.
Claims20
A semiconductor device, comprising:
- a semiconductor chip including a gate structure, the semiconductor chip having a first region and a second region that surrounds sides of the first region;
- first solder balls on the first region of the semiconductor chip and containing a first weight percent of silver;
- second solder balls on the first region of the semiconductor chip and containing a second weight percent of silver greater than the first weight percent;
- and
- third solder balls on the second region of the semiconductor chip and containing a third weight percent of silver less than the first weight percent.
A semiconductor device, comprising:
- a semiconductor chip including a gate structure, the semiconductor chip having a first region and a second region that surrounds sides of the first region;
- a redistribution layer on the first region of the semiconductor chip;
- first solder balls on the first region of the semiconductor chip, electrically insulated from the redistribution layer, and having a first degree of thermal expansion;
- second solder balls on the first region of the semiconductor chip, electrically connected to the redistribution layer, and having a second degree of thermal expansion greater than the first degree of thermal expansion;
- and
- third solder balls on the second region of the semiconductor chip, electrically insulated from the redistribution layer, and having a third degree of thermal expansion less than the first degree of thermal expansion.
A semiconductor device, comprising:
- a semiconductor chip including a gate structure, the semiconductor chip having a first region and a second region that surrounds sides of the first region;
- a redistribution layer on the first region of the semiconductor chip;
- first solder balls on the first region of the semiconductor chip, electrically insulated from the redistribution layer, and having a first hardness;
- second solder balls on the first region of the semiconductor chip, electrically connected to the redistribution layer, and having a second hardness greater than the first hardness;
- and
- third solder balls on the second region of the semiconductor chip, electrically insulated from the redistribution layer, and having a third hardness less than the first hardness.
Dependencies are inferred from the claim text.