Finfet device
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorYong LI
Life of this patent
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Abstract
A fin field effect transistor (FinFET) device is provided. The device includes a fin protruding from a semiconductor substrate and a gate structure on the semiconductor substrate across a length portion of the fin and covering a portion of a top and sidewalls of the fin. Grooves are formed in the fin on both sides of the gate structure. A doped region is formed on a bottom and sidewalls of each groove. A portion of the doped regions which are close to the gate structure on the both sides forms the lightly doped source/drain region. An epitaxial layer is formed on the doped region in each groove. The lightly doped source/drain region is formed between the epitaxial layer and the gate structure.
Claims16
A fin field effect transistor (FinFET) device, comprising:
- a fin protruding from a semiconductor substrate;
- a gate structure on the semiconductor substrate across a length portion of the fin and covering a portion of a top and sidewalls of the fin, wherein grooves are formed in the fin on both sides of the gate structure;
- a doped region formed on a bottom and sidewalls of each groove, wherein a portion of the doped regions which are close to the gate structure on the both sides forms the lightly doped source/drain region;
- and
- an epitaxial layer formed on the doped region in each groove, wherein the lightly doped source/drain region is formed between the epitaxial layer and the gate structure.
A fin field effect transistor (FinFET) device, comprising:
- a semiconductor substrate including a PMOS and an NMOS region;
- fins protruding from the PMOS and the NMOS region of the semiconductor substrate;
- a gate structure on the semiconductor substrate across a length portion of the fins and covering a portion of a top and sidewalls of the fins, wherein grooves are formed in each fin on both sides of the gate structure;
- a doped region formed on a bottom and sidewalls of each groove, wherein a portion of the doped regions which are close to the gate structure on the both sides forms the lightly doped source/drain region;
- and
- an epitaxial layer formed on the doped region in each groove, wherein the lightly doped source/drain region is formed between the epitaxial layer and the gate structure.
Dependencies are inferred from the claim text.