Method for Singulating Packaged Integrated Circuits and Resulting Structures

A method comprising:

• sawing through a molding compound and a top portion of a singulation region of a wafer with a first saw blade to form a kerf, wherein the wafer comprises a substrate, a first integrated circuit on the substrate, the sigulation region along a perimeter of the first integrated circuit, a first connector electrically connected to the first integrated circuit, and the molding compound over the substrate and around the first connector, wherein the kerf comprises:
• a straight sidewall;
• and
• an angled sidewall disposed at a different angle than the straight sidewall, wherein the angled sidewall is connected to the straight sidewall at a point higher than a bottom of the first connector;
• and
• sawing through a bottom portion of the singulation region with a second saw blade.

A method comprising:

• removing a top portion of a wafer to form a kerf in the wafer by performing a first cutting process along a singulation region of the wafer, wherein the wafer comprises a substrate, a first integrated circuit (IC) region over the substrate, a second IC region over the substrate, and the singulation region between the first IC region and the second IC region, wherein the kerf comprises:
• a straight sidewall;
• an angled sidewall disposed at a different angle from the straight sidewall;
• and
• a bottom surface disposed between an upper surface of the substrate and an lower surface of the substrate opposing the upper surface, wherein the bottom surface of the kerf is parallel with the upper surface of the substrate, wherein the angled sidewall connects the straight sidewall with the bottom surface;
• and
• after removing the top portion of the wafer, performing a second cutting process different from the first cutting process to cut through the wafer along the singulation region, wherein the first IC region is separated from the second IC region after the second cutting process.