Method for forming an electrical contact between a semiconductor film and a bulk handle wafer, and resulting structure

A process, comprising:

• forming an opening extending completely through a semiconductor film and an insulating layer to expose a surface of a semiconductor bulk handle wafer wherein the insulating layer is on said semiconductor bulk handle wafer and a remaining portion of the semiconductor film is on said insulating layer;
• removing portions of the insulating layer under the remaining portion of the semiconductor film to form a laterally extended opening;
• epitaxially baking to round said remaining portion of the semiconductor film to fill the laterally extended opening and seal an edge of the insulating layer across an entire thickness of the insulating layer;
• epitaxially growing semiconductor material to fill said opening at least to a level of a top of said remaining portion of the semiconductor film;
• and
• providing a trench isolation surrounding a region of the semiconductor film and the epitaxially grown semiconductor material in said opening to define an electrical contact made to the semiconductor bulk handle wafer that extends through said opening.

An integrated circuit, comprising:

• a semiconductor bulk handle wafer;
• an insulating layer on said semiconductor bulk handle wafer;
• a semiconductor film on said insulating layer;
• an opening extending completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer;
• epitaxial material filling said opening;
• and
• a trench isolation surrounding a region of the semiconductor film and epitaxial material to define an electrical contact made to the semiconductor bulk handle wafer through said opening.