Cooling element for an electrostatic chuck assembly
AssigneeApplied Materials, Inc.
InventorsMichael D. Willwerth, Roberto Cesar Cotlear, Andreas Schmid
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AssigneeApplied Materials, Inc.
InventorsMichael D. Willwerth, Roberto Cesar Cotlear, Andreas Schmid
Estimating the term…
An electrostatic chuck assembly with improved thermal uniformity and stability is disclosed herein. The electrostatic chuck assembly includes a puck having a chucking electrode disposed therein and a cooling base connected to the puck. The cooling base is formed a first material and includes a top surface, a first cooling channel, a second cooling channel configured to flow coolant therethrough independent of flow through the first cooling channel, and a first thermal spreading element aligned with the first cooling channel and disposed between the first cooling channel and the puck. The first thermal spreading element is formed from a second material that has a thermal conductivity higher than a thermal conductivity of the first material.
An electrostatic chucking assembly comprising:
A semiconductor processing chamber comprising:
The semiconductor processing chamber 12, wherein the cooling base further comprises:
The semiconductor processing chamber 13, wherein the first thermal spreading element further comprises a thermal break between the first and second thermal spreading elements.
The semiconductor processing chamber 14, wherein the thermal break comprises a third material having a thermal conductivity lower than the thermal conductivity of the second material.
The semiconductor processing chamber 12, wherein the first thermal spreading element comprises:
The semiconductor processing chamber 12, wherein the cap is flush with the top surface of the base.
The semiconductor processing chamber 12, wherein the first thermal spreading element comprises more than two discrete portions.
The semiconductor processing chamber 12, wherein the first cooling channel and the first thermal spreading element comprise one of a common shape and a common size.
The semiconductor processing chamber 13, wherein the common shape is a ring-like shape.
Dependencies are inferred from the claim text.