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US 2019/0244847 A1Published application
Heater for semiconductor manufacturing apparatus
AssigneeNGK Insulators, Ltd.
InventorsKeita YAMANA, Kazuhiro NOBORI, Kengo TORII
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Abstract
A heater for a semiconductor manufacturing apparatus, the heater includes an AlN ceramic substrate and a heating element embedded inside the AlN ceramic substrate. The AlN ceramic substrate contains O, C, Ti, Ca, and Y as impurity elements, includes an yttrium aluminate phase as a crystal phase, and has a Ti/Ca mass ratio of 0.13 or more, and a TiN phase is not detected in an XRD profile measured with Cu K-α radiation.
Claims8
A heater for a semiconductor manufacturing apparatus, the heater comprising:
- an AlN ceramic substrate and a heating element embedded inside the AlN ceramic substrate,
- wherein the AlN ceramic substrate contains O, C, Ti, Ca, and Y as impurity elements, includes an yttrium aluminate phase as a crystal phase, and has a Ti/Ca mass ratio of 0.13 or more, and a TiN phase is not detected in an XRD profile measured with Cu K-α radiation.
Dependencies are inferred from the claim text.