Heating Apparatus, Method and System for Producing Semiconductor Chips in the Wafer Assembly

A heating device for producing semiconductor chips in a wafer composite, the heating device comprising:

• a heating plane configured to be arranged parallel to a plane of the semiconductor chips in the wafer composite;
• and
• a first heating unit extending substantially in a radial direction with respect to a reference point in the heating plane,
• wherein the first heating unit comprises a plurality of inductive heating elements arranged adjacent to each other in a substantially radial direction, each inductive heating element having a predetermined distance from the reference point, and
• wherein the inductive heating elements are formed as electromagnets or permanent magnets configured to generate eddy currents in a carrier of the wafer composite.

A method for producing semiconductor chips in a wafer composite, the method comprising:

• providing a carrier having a wafer plane and a reference point in the wafer plane, wherein the carrier is configured to accommodate at least one wafer composite in the wafer plane;
• providing a heating device comprising a heating plane and a first heating unit arranged laterally offset from a reference point in the heating plane, and arranging the heating device with its heating plane parallel to the wafer plane;
• arranging at least one wafer composite in the wafer plane of the carrier;
• rotating the carrier and the heating device relative to each other about an axis perpendicular to the heating plane and the wafer plane through the reference points;
• controlling the first heating unit in such a way that a temperature of the carrier is influenced;
• providing a bending sensor for determining a bending characteristic value, the bending characteristic value being representative of a bending of the at least one wafer composite relative to the wafer plane;
• and
• controlling the first heating unit based on the bending characteristic value.

A system for producing semiconductor chips in a wafer composite, the system comprising:

• a carrier having a wafer plane and a reference point in the wafer plane, wherein the carrier is configured to accommodate at least one wafer composite in the wafer plane;
• a heating device comprising a heating plane and a first heating unit, wherein the first heating unit is arranged laterally offset with respect to the reference point in the heating plane, and wherein the heating device is arranged with its heating plane parallel to the wafer plane;
• a rotational element configured to rotate the carrier and the heating device relative to each other about an axis perpendicular to the heating plane and the wafer plane through the reference points and
• a control device configured to control the first heating unit such that a temperature of the carrier is influenced,
• wherein the first heating unit extends substantially in a radial direction with respect to a reference point in the heating plane,
• wherein the first heating unit comprises a plurality of inductive heating elements arranged adjacent to each other in a substantially radial direction, each heating element having a predetermined distance from the reference point in the heating plane,
• wherein the inductive heating elements are formed as electromagnets or permanent magnets for generating eddy currents in the carrier of the wafer composite.