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US 2019/0244838 A1Published application
Method of Forming Boron-Based Film, and Film Forming Apparatus
AssigneeTokyo Electron Limited
InventorsYoshimasa WATANABE, Masahiro OKA, Hirokazu UEDA, Yuuki YAMAMOTO
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Abstract
A method of forming a boron-based film includes forming the boron-based film mainly containing boron on a substrate by plasma CVD using plasma of a processing gas including a boron-containing gas; and controlling film stress of the formed boron-based film by adjusting a process parameter.
Claims20
A method of forming a boron-based film, comprising:
- forming the boron-based film mainly containing boron on a substrate by plasma CVD using plasma of a processing gas including a boron-containing gas;
- and
- controlling film stress of the formed boron-based film by adjusting a process parameter.
A film forming apparatus for forming a boron-based film mainly containing boron on a substrate, comprising:
- a chamber in which a substrate is accommodated;
- a mounting table configured to support the substrate in the chamber;
- a gas supply mechanism configured to supply a processing gas including a boron-containing gas into the chamber;
- an exhaust device configured to exhaust an interior of the chamber,
- a plasma generating part configured to generate plasma in the chamber,
- a bias voltage applying high frequency power supply configured to apply high frequency power to the mounting table and apply a bias voltage to the substrate on the mounting table;
- and
- a control part configured to control film stress of the boron-based film formed on the substrate by adjusting the power of the bias voltage applying high frequency power supply.
5 more elements
Dependencies are inferred from the claim text.