Fin Field Effect Transistor (FinFET) Device Structure and Method for Forming the Same

A method for forming a fin field effect transistor (FinFET) device structure, comprising:

• etching a dummy material over a semiconductor fin to form a dummy gate structure, the dummy gate structure having a first width located a first distance away from a semiconductor substrate, a second width located a second distance away from the semiconductor substrate, and a third width located a third distance away from the semiconductor substrate, the second distance being greater than the first distance and the second width being less than the first width, the third distance being greater than the second distance and the third width being greater than the second width;
• forming dielectric materials around the dummy gate structure;
• planarizing the dielectric materials to expose the dummy gate structure;
• and
• removing the dummy gate structure.

A method for forming a fin field effect transistor (FinFET) device structure, comprising:

• forming a spacer adjacent to a dummy gate structure over a semiconductor fin, wherein the forming the spacer forms a first vertical portion, a first angled portion, and a first horizontal portion extending between the first vertical portion and the first angled portion;
• depositing an interlayer dielectric around the spacer and the dummy gate structure;
• removing the dummy gate structure to form an opening, the opening having the spacer as a sidewall;
• and
• depositing a gate electrode within the opening.