Method for removing silicon oxide and integrated circuit manufacturing process
AssigneeBeijing Naura Microelectronics Equipment Co., Ltd.
InventorZhenguo MA
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Abstract
A method for removing silicon oxide from a wafer and an integrated circuit manufacturing process are provided. The method includes: introducing a dehydrated hydrogen fluoride gas and a dehydrated alcohol gas into a process chamber; mixing the dehydrated hydrogen fluoride gas with the dehydrated alcohol gas to generate gaseous etchants; allowing reactions between the etchants and the wafer in the process chamber under a high pressure maintained in the process chamber to improve an etching selectivity; and pumping out reaction products from the process chamber.
Claims20
A method for removing silicon oxide from a wafer, comprising:
- introducing a dehydrated hydrogen fluoride gas and a dehydrated alcohol gas into a process chamber;
- mixing the dehydrated hydrogen fluoride gas with the dehydrated alcohol gas to generate gaseous etchants;
- allowing reactions between the etchants and the wafer in the process chamber under a high pressure maintained in the process chamber to improve an etching selectivity;
- and
- pumping out reaction products from the process chamber.
An integrated circuit manufacturing process, comprising:
- removing silicon oxide from a wafer by a removal method, the removal method including:
- introducing a dehydrated hydrogen fluoride gas and a dehydrated alcohol gas into a process chamber;
- mixing the dehydrated hydrogen fluoride gas with the dehydrated alcohol gas to generate gaseous etchants;
- allowing reactions between the etchants and the wafer in the process chamber under a high pressure maintained in the process chamber to improve an etching selectivity;
- and
- pumping out reaction products from the process chamber.
Dependencies are inferred from the claim text.