Plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsAkihiro YOKOTA, Shinji HIMORI, Tatsuro OHSHITA, Shu KUSANO
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AssigneeTokyo Electron Limited
InventorsAkihiro YOKOTA, Shinji HIMORI, Tatsuro OHSHITA, Shu KUSANO
Estimating the term…
Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.
A plasma processing apparatus that performs a processing by applying plasma of a processing gas on a substrate to be processed, the apparatus comprising:
Dependencies are inferred from the claim text.