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US 2019/0244790 A1Published application
Method of manufacturing semiconductor device
AssigneeKokusai Electric Corporation
InventorsTsukasa KAMAKURA, Kazuhiro MORIMITSU, Hideharu ITATANI, Eisuke NISHITANI, Shun MATSUI
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Abstract
There is provided a technique that includes supplying a first process gas to a process space where a substrate is accommodated, and using an inert gas as a carrier gas of the first process gas; and supplying plasma of a second process gas to the process space where the substrate is accommodated, and using an active auxiliary gas as a carrier gas of the second process gas.
Claims20
A method of manufacturing a semiconductor device, comprising:
- supplying a first process gas to a process space where a substrate is accommodated, and using an inert gas as a carrier gas of the first process gas;
- and
- supplying plasma of a second process gas to the process space where the substrate is accommodated, and using an active auxiliary gas, which is different from the inert gas, as a carrier gas of the second process gas without supplying the inert gas.
Dependencies are inferred from the claim text.