Plasma etching reaction chamber

A plasma etching reaction chamber, comprising:

• a casing having a receiving chamber;
• an inner periphery and a bottom of the receiving chamber being formed with respective inner shielding plates for sticking the sub-products generated in the process of plasma cleaning;
• a base liftably installed below the receiving chamber;
• a bottom of the base being extended with a driving rod;
• the driving rod extending downwards to pass through the casing;
• a driving unit serving to drive the base to move upwards or downwards;
• a first electrode installed in an upper side of the receiving chamber;
• a second electrode installed on the base for supporting a wafer;
• a radio frequency electrode rod installed on a bottom of the second electrode;
• an upper side of the radio frequency electrode rod being within the driving rod and a lower side of the radio frequency electrode rod extending downwards to expose out of the driving rod and extending out of the casing for supplying externally RF power into the second electrode so that the first electrode and the second electrode can generate plasma therebetween;
• and
• wherein the second electrode has a plurality of water channels and a bottom of the second electrode is installed with two cooling water tubes which are communicated with the plurality of water channels;
• upper sides of the two cooling water tubes are hidden within the driving rod and lower sides thereof extend downwards to be out of the casing so that external cooling water can flow into the cooling water tubes and then to the water channels to achieve the object of cooling.