Inspection system, image processing device and inspection method

An image processing device, configured to process an image obtained by a microscope that scans a sample with a beam that is an incident electron beam, and to perform:

• an acquisition process of acquiring a plurality of images relating to brightness based on an amount of a signal electron detected from the sample as a result of controlling the microscope according to a plurality of image acquisition conditions and irradiating the sample with the incident electron beam, the plurality of image acquisition conditions being multiple combinations of different irradiation amounts of the beam per unit length;
• a first generation process of generating a plurality of actually measured profiles that show a relationship between an irradiation position of the beam in the sample and the brightness of the sample, based on the plurality of images acquired in the acquisition process;
• and
• an output process of outputting an electrical contact characteristic of the sample based on the plurality of actually measured profiles generated in the first generation process.

An inspection method that controls a microscope that scans a sample with a beam that is an incident electron beam, the inspection method comprising:

• an acquisition process of acquiring a plurality of images relating to brightness based on an amount of a signal electron detected from the sample as a result of controlling the microscope according to a plurality of image acquisition conditions and irradiating the sample with the incident electron beam, the plurality of image acquisition conditions being multiple combinations of different irradiation amounts of the beam per unit length;
• a first generation process of generating a plurality of actually measured profiles that show a relationship between an irradiation position of the beam in the sample and the brightness of the sample, based on the plurality of images acquired in the acquisition process;
• and
• an output process of outputting an electrical contact characteristic of the sample based on the plurality of actually measured profiles generated in the first generation process.