Ion implantation apparatus and ion implantation method

An ion implantation method using an ion implantation apparatus including a beamline device configured to transport an ion beam with which a wafer is irradiated, a slit that is provided downstream of the beamline device, and a beam current measurement device that is provided at a position away from the slit in a beam traveling direction,

• wherein the beamline device has a deflection device deflecting the ion beam in a first direction perpendicular to the beam traveling direction by applying at least one of an electric field and a magnetic field to the ion beam,
• wherein the slit is disposed such that the first direction coincides with a slit width direction and configured to have a variable slit width, and
• wherein the beam current measurement device is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in the first direction,
• the ion implantation method comprising:
• calculating angle information in the first direction on the ion beam by acquiring a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction with the beam current measurement device while changing a deflection amount of the ion beam in the first direction with the deflection device;
• and
• adjusting an implantation angle of the ion beam with which the wafer is irradiated based on the calculated angle information in the first direction and irradiating the wafer with the ion beam at the adjusted implantation angle.