Semiconductor memory device
AssigneeWinbond Electronics Corp.
InventorYasuhiro Tomita
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Abstract
A semiconductor memory device capable of satisfying multiple reliability conditions and multiple performance requirements is provided. A variable resistance memory of the disclosure makes it possible to write data in a memory array by changing a write condition according to the type of a write command from the outside. If the write command is an endurance-related command, an endurance algorithm is selected and data is written in an endurance storage area. If the write command is a retention-related command, a retention algorithm is selected and data is written in a retention storage area.
Claims20
A semiconductor memory device, comprising:
- a memory array comprising a reversible and non-volatile variable resistance element;
- and
- a writing element writing data to the memory array based on a write condition selected according to a type of a write command.
A semiconductor memory device, comprising:
- a memory array comprising a reversible and non-volatile variable resistance element;
- and
- a writing element writing data to the memory array based on a write condition selected according to an address inputted from outside during a write operation.
Dependencies are inferred from the claim text.