Memory with symmetric read current profile and read method thereof

A memory, comprising:

• a first memory array formed by a plurality of memory cells;
• a second memory array formed by a plurality of memory cells;
• and
• a read circuit, comprising:
• a sensing circuit configured to provide a first sensing signal according to a reference signal and first data from the first memory array, and a second sensing signal according to the reference signal and second data from the second memory array;
• an exchange unit configured to selectively provide one of the first sensing signal or the second sensing signal as a first signal and selectively provide the other as a second signal according to a control signal;
• a random number generator configured to generate the control signal;
• and
• an output buffer configured to selectively provide the first signal or the second signal as an output according to the control signal,
• wherein binary representation of the first data is complementary to that of the second data.

A read method for a memory, comprising:

• storing complementary data into a first memory array and a second memory array of the memory;
• obtaining first data from the first memory array and second data from the second memory array according an address signal;
• and
• selectively providing the first data or the second data as an output according to a control signal,
• wherein a first read current of the memory for providing the first data as the output is close to a second read current of the memory for providing the second data as the output.