Semiconductor memory device managing flexible refresh skip area
AssigneeSamsung Electronics Co., Ltd.
InventorsUksong Kang, Hoiju Chung
Life of this patent
Estimating the term…
Loading patent…
AssigneeSamsung Electronics Co., Ltd.
InventorsUksong Kang, Hoiju Chung
Estimating the term…
A semiconductor memory device having a flexible refresh skip area includes a memory cell array including a plurality of rows to store data, a row decoder connected to the memory cell array, a refresh area storage unit to store a beginning address and an end address of a memory area that is to be refreshed in which the memory area that is to be refreshed does not include a refresh skip area having a size is selectively and/or adaptively changed, and a refresh control circuit connected to the row decoder and the refresh area storage unit. The refresh control circuit controls a refresh operation for the area that is to be refreshed and not for the refresh skip area.
A memory system comprising:
A memory system comprising:
A method of operating a memory device, the method comprising:
Dependencies are inferred from the claim text.