Multiple plate line architecture for multideck memory array

Abstract

Methods, systems, and devices for multiple plate line architecture for multideck memory arrays are described. A memory device may include two or more three-dimensional arrays of ferroelectric memory cells overlying a substrate layer that includes various components of support circuitry, such as decoders and sense amplifiers. Each memory cell of the array may have a ferroelectric container and a selector device. Multiple plate lines or other access lines may be routed through the various decks of the device to support access to memory cells within those decks. Plate lines or other access lines may be coupled between support circuitry and memory cells through on pitch via (OPV) structures. OPV structures may include selector devices to provide an additional degree of freedom in multideck selectivity. Various number of plate lines and access lines may be employed to accommodate different configurations and orientations of the ferroelectric containers.

Dependencies are inferred from the claim text.