Method for producing magnetic memory comprising magnetic tunnel junction element

A method for producing a magnetic memory including a magnetic tunnel junction element, the method comprising:

• a step of forming a magnetic film in which a non-magnetic layer is disposed between a first magnetic layer and a second magnetic layer on a substrate provided with an electrode layer;
• a magnetic-field annealing treatment step of performing annealing treatment on the substrate at a first treatment temperature in a state where a magnetic field is applied in a direction perpendicular to a film surface of the first magnetic layer or the second magnetic layer in vacuum;
• a step of performing etching treatment on the magnetic film formed on the substrate to form a magnetic tunnel junction element having a predetermined pattern;
• a protective film formation step of forming a protective film protecting the magnetic tunnel junction element formed on the substrate;
• a formation step accompanied by thermal history, in which a constituent element of a magnetic memory is formed on the substrate, on which the protective film has been formed, after the protective film formation step;
• and
• a non-magnetic-field annealing treatment step of implementing annealing treatment at a second treatment temperature lower than the first treatment temperature on the substrate in an annealing treatment chamber, in vacuum or inert gas, in a state in which no magnetic field is applied.