Polarization defined zero misalignment vias for semiconductor packaging

A method of forming a semiconductor package, the method comprising:

• depositing a photoresist layer on a seed layer that is on a dielectric layer, wherein the photoresist layer comprises dual-tone photoresist materials;
• removing a first region of the photoresist layer to uncover a first portion of the seed layer to form a zero misalignment-via (ZMV), wherein the first region of the photoresist layer is exposed to a first type of light;
• depositing a first conductive layer onto the first portion;
• removing a second region of the photoresist layer adjacent to the first region to uncover a second portion of the seed layer to form a trace, wherein the second region of the photoresist layer is exposed to a second type of light that differs from the first type of light;
• and
• depositing a second conductive layer onto the first conductive layer and the second portion of the seed layer.

A method of forming a semiconductor package, the method comprising:

• depositing a photoresist layer on a seed layer that is on a dielectric layer, wherein the photoresist layer comprises dual-tone photoresist materials;
• removing a first region of the photoresist layer to expose a first portion of the seed layer to form a zero misalignment-via (ZMV), wherein the first region of the photoresist layer is exposed to longitudinally polarized light;
• depositing a first conductive layer onto the first portion;
• removing a second region of the photoresist layer adjacent to the first region to expose a second portion of the seed layer to form a trace, wherein the second region of the photoresist layer is exposed to transversely polarized light;
• and
• depositing a second conductive layer onto the first conductive layer and the second portion of the seed layer.