Photoelectric devices and image sensors and electronic devices

A photoelectric device, comprising:

• a first electrode and a second electrode facing each other;
• and
• a first photoelectric conversion layer and a second photoelectric conversion layer, each of the first and second photoelectric conversion layers between the first electrode and the second electrode,
• wherein each photoelectric conversion layer of the first photoelectric conversion layer and the second photoelectric conversion layer is configured to selectively absorb light in a green wavelength spectrum of light, and
• external quantum efficiency at a peak absorption wavelength and external quantum efficiency at a wavelength of 450 nm of the first photoelectric conversion layer and the second photoelectric conversion layer satisfy Relationship Equation 1,
• EQE(2)λmax2/EQE(2)450 nm>EQE(1)λmax1/EQE(1)450 nm [Relationship Equation 1]
• wherein in Relationship Equation 1,
• EQE(2)λmax2 is external quantum efficiency at a second peak absorption wavelength (λmax2) of the second photoelectric conversion layer,
• EQE(2)450 nm is external quantum efficiency at a wavelength of 450 nm of the second photoelectric conversion layer,
• EQE(1)λmax1 is external quantum efficiency at a first peak absorption wavelength (λmax1) of the first photoelectric conversion layer, and
• EQE(1)450 nm is external quantum efficiency at a wavelength of 450 nm of the first photoelectric conversion layer.

An image sensor, comprising:

• a semiconductor substrate;
• and
• a plurality of photoelectric devices on the semiconductor substrate, the plurality of photoelectric devices configured to convert different ones of blue light, green light, or red light into electric signals, respectively, each photoelectric device of the plurality of photoelectric devices including
• a first electrode,
• a first photoelectric conversion layer on the first electrode, the first photoelectric conversion layer including a first heterojunction that includes a first p-type semiconductor and a first n-type semiconductor,
• a second photoelectric conversion layer on the first photoelectric conversion layer, the second photoelectric conversion layer including a second heterojunction that includes a second p-type semiconductor and a second n-type semiconductor, and
• a second electrode on the second photoelectric conversion layer,
• wherein the first photoelectric conversion layer is associated with a first peak absorption wavelength (λmax1), the second photoelectric conversion layer is associated with a second peak absorption wavelength (λmax2), both of the first peak absorption wavelength and the second peak absorption wavelength are included in a common wavelength spectrum of light, the common wavelength spectrum of light being one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultra-violet wavelength spectrum of light,
• wherein a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.