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US 2019/0173007 A1Published application
Apparatuses including memory devices and related electronic systems
AssigneeOvonyx Memory Technology, LLC
InventorsJun Liu, Michael P. Violette
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Abstract
Memory devices having memory cells comprising variable resistance material include an electrode comprising a single nanowire. Various methods may be used to form such memory devices, and such methods may comprise establishing contact between one end of a single nanowire and a volume of variable resistance material in a memory cell. Electronic systems include such memory devices.
Claims20
An apparatus, comprising:
- an array of memory devices, at least one memory device of the array comprising:
- a conductive pad;
- a generally conical structure having a tip and a base coupled to the conductive pad;
- and
- a single nanowire extending from the tip of the generally conical structure, wherein an effective cross-sectional area of the tip of the generally conical structure is sized to facilitate formation of only the single nanowire thereon;
- and
- at least one conductive line connecting individual memory devices of the array including the at least one memory device of the array.
4 more elements
An electronic system comprising:
- at least one processor;
- at least one memory device in electrical communication with the at least one processor, the at least one memory device comprising:
- a conductive pad;
- a generally conical structure coupled to the conductive pad;
- and
- a single nanowire extending from an end of the generally conical structure opposite the conductive pad, wherein the end of the generally conical structure is sized to facilitate formation of only the single nanowire thereon;
- and
- at least one of an input device and an output device in electrical communication with the at least one processor.
5 more elements
Dependencies are inferred from the claim text.