Method for fabricating an oxram memory location for limiting dispersions
AssigneeCommissariat à I'Énergie Atomique et aux Énergies Alternatives
InventorsMarios Barlas, Philippe Blaise, Laurent Grenouillet, Boubacar Traore
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Abstract
A method for fabricating an OxRAM type memory location, including the steps of providing a stack including a superposition of a first layer that includes a first material made of Ti at more than 30% by mole fraction; a second layer made of HfO2 positioned under the first layer; via an ion implantation of a second material chosen from Xe, Kr or Ar in the first layer, carrying out an implantation of the first material in the second layer by collision with recoil effect in the first layer.
Claims14
The method for fabricating an OxRAM memory location, comprising the steps of:
- providing a stack comprising a superposition of:
- a first layer that includes a first material made of Ti at more than 30% by mole fraction;
- a second layer made of HfO2 positioned under the first layer;
- via an ion implantation of a second material chosen from Xe, Kr or Ar in the first layer, said implantation being carried out with an inclination of between 5° and 30° relative to the normal to the first layer, carrying out an implantation of the first material in the second layer by collision with recoil effect in the first layer.
An OxRAM memory location, comprising a stack comprising a superposition of:
- a first layer that includes a first material made of Ti at more than 30% by mole fraction;
- a second layer that predominantly includes HfO2, positioned under the first layer and having an implantation of Ti;
- wherein the second layer includes Xe with a molar concentration of between 0.1% and 0.9%.
Dependencies are inferred from the claim text.