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AssigneeIndustry-University Cooperation Foundation Hanyang University
InventorsJea Gun PARK, Du Yeong LEE, Seung Eun LEE, Min Su JEON, Jong Ung BAEK, Tae Hun SHIM
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The present invention provides a memory device in which lower electrodes, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, synthetic exchange diamagnetic layers, and an upper electrode are formed on a substrate in a laminated manner. According to the present invention, the lower electrodes and the seed layer are formed of a polycrystalline conductive material, and the perpendicular magnetic anisotropy of the magnetic tunnel junction is maintained upon heat treatment at a high temperature of 400° C. or more.
A memory device in which lower electrodes, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, synthetic exchange diamagnetic layers, and an upper electrode are formed on a substrate in a laminated manner, wherein the magnetic tunnel junction comprises free layers consisting of first and second free layers and a separation layer, and a tunneling barrier and a pinned layer, wherein the separation layer is formed between the first and second free layers and is formed of a polycrystalline conductive material.
A memory device in which lower electrodes, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, synthetic exchange diamagnetic layers, and an upper electrode are formed on a substrate in a laminated manner,
A method of fabricating a memory device, comprising:
Dependencies are inferred from the claim text.